Hynix 16GB (2x 8GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Kit Classification_ram-ddr4-2133-udimm-32gb-2x-dr-fm HMT125S6TFR8C-H9 Capacity 2GB (1x 2GB)

HMT125S6TFR8C-H9 Capacity 2GB (1x 2GB) Brand Hynix Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

2xCT25664AA800 Capacity 4GB (2x 2GB) Brand Crucial Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

but the effective rate is 333 megatransfers per second (MT/s) because there are 166 million rising edges per second and 166 million falling edges per second of a clock signal running at 166 MHz

This RAM module has been specially designed and proven in OWC's lab and is guaranteed to meet or exceed all Apple specifications

Hynix 16GB (2x 8GB) DDR3-1600 PC3-12800 1.5V DR x8 204-pin SODIMM RAM Kit Classification_ram-ddr4-2133-udimm-32gb-2x-dr-fm HMT125S6TFR8C-H9 Capacity 2GB (1x 2GB)Product Overview This 16GB (2x 8GB) DDR3 1600 MT s Dual rank, x8 configuration RAM kit from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM kit also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.