Hynix 4GB (1x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr2-667-rdimm-8gb-2x-dr M378B5173QH0-CK0 Capacity 4GB (1x 4GB)

M378B5173QH0-CK0 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1600 - 1600MT/s - PC3-12800 Voltage 1

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (2x 4GB) DDR3L 1866 MT/s 240-pin RDIMM RAM kit from Crucial

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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 16-chip 256M x8 Pieces in Kit 1 Compatibility

Hynix 4GB (1x 4GB) DDR3-1333 PC3-10600 1.5V DR x8 240-pin UDIMM RAM Module Classification_ram-ddr2-667-rdimm-8gb-2x-dr M378B5173QH0-CK0 Capacity 4GB (1x 4GB)Product Overview This 4GB (1x 4GB) DDR3 1333 MT s Dual rank, x8 configuration RAM module from Hynix is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.