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5V with a CAS Latency of CL3
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank Configuration 16-chip 512M x8 Pieces in Kit 2 Compatibility
Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR2 800 MT/s 240-pin RDIMM RAM module from Hynix
M393B5170DZ1-CH9 Capacity 4GB (1x 4GB) Brand Samsung Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1
Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3l-1866-sodimm-4gb-1x-sr 5V with a CAS LatencyProduct Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.
US$ 10.00
US$ 12.99
US$ 900.00
US$ 12.00
