Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M393B4G70BM0-YH9 Capacity 32GB (1x 32GB)

M393B4G70BM0-YH9 Capacity 32GB (1x 32GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

MT18JSF51272AZ-1G4M1 Capacity 4GB (1x 4GB) Brand Micron Speed DDR3-1333 - 1333MT/s - PC3-10600 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Single rank Configuration 8-chip 512M x8 Pieces in Kit 1 Compatibility

but the effective rate is 333 megatransfers per second (MT/s) because there are 166 million rising edges per second and 166 million falling edges per second of a clock signal running at 166 MHz

Hynix 4GB (1x 4GB) CL11 DDR3L-1600 PC3L-12800 1.35V / 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr3-1600-udimm-4gb-1x-sr-fm M393B4G70BM0-YH9 Capacity 32GB (1x 32GB)Product Overview This 4GB (1x 4GB) DDR3L 1600 MT s RAM module from Hynix is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.