Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr M391B5773DH0-YH9 Capacity 2GB (1x 2GB)

M391B5773DH0-YH9 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3L-1333 - 1333MT/s - PC3L-10600 Voltage 1

M378B5673EH1-CF8 Capacity 2GB (1x 2GB) Brand Samsung Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Pieces in Kit 1 Compatibility

MT4GU16H2568-66-HPXX Capacity 4GB (1x 4GB) Brand Micron Speed DDR3-1066 -1066MT/s - 1067MT/s - PC3-8500 Voltage 1

Hynix 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-udimm-16gb-2x-dr M391B5773DH0-YH9 Capacity 2GB (1x 2GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Hynix is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.