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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL11 Configuration x8 Pieces in Kit 2
2xMTA16ATF2G64AZ-2G1B1 Capacity 32GB (2x 16GB) Brand Micron Speed DDR4-2133 - 2133MT/s - PC4-17000 Voltage 1
CT102464BD186D Capacity 8GB (1x 8GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
but the effective rate is 667 megatransfers per second (MT/s) because there are 333 million rising edges per second and 333 million falling edges per second of a clock signal running at 333 MHz
Samsung 4GB (1x 4GB) CL9 DDR3-1333 PC3-10600 1.5V ECC 240-pin EUDIMM RAM Module Model_Mac_Book_Pro_9_1 5V Technology DDR3L Error CorrectionProduct Overview Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 4GB (1x 4GB) DDR3 1333 MT s 240 pin EUDIMM RAM module from Samsung . This RAM module is for use in DDR3 compatible systems and operates at 1333 MT s with an overall transfer rate of PC3 10600. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL9, and is designed
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