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5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 204-pin SODIMM Ranks Dual rank CAS Latency CL7 Configuration 512M x8 Pieces in Kit 2 Compatibility
CT2K8G3S186DM Capacity 16GB (2x 8GB) Brand Crucial Speed DDR3L-1866 - 1866MT/s - PC3L-14900 Voltage 1
CT4G3S160BM Capacity 4GB (1x 4GB) Brand Crucial Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
5V Technology DDR3 Error Correction ECC Signal Processing Registered Form Factor 240-pin RDIMM CAS Latency CL11 Pieces in Kit 1 Compatibility
Samsung 512MB (2x 256MB) CL2.5 DDR-266 PC2100 2.5V SR x8 184-pin UDIMM RAM Kit System Type_Workstation 5V Technology DDR3L Error CorrectionProduct Overview This 512MB (2x 256MB) DDR 266 MT s Single rank, x8 configuration RAM kit from Samsung is for use in DDR compatible systems and operates at 266 MT s with an overall transfer rate of PC2100. This RAM kit also operates at a standard voltage of 2. 5V with a CAS Latency of CL2. 5, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical
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