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MT18KSF51272AZ-1G6K1ZE Capacity 4GB (1x 4GB) Brand Micron Speed DDR3L-1600 - 1600MT/s - PC3L-12800 Voltage 1
but the effective rate is 2133 megatransfers per second (MT/s) because there are 1066 million rising edges per second and 1066 million falling edges per second of a clock signal running at 1066 MHz
8V Technology DDR2 Error Correction ECC Signal Processing Fully Buffered Form Factor 240-pin FB-DIMM Ranks Dual rank Configuration x4 Pieces in Kit 2 Compatibility
5V Technology DDR3L Error Correction Non-ECC Signal Processing Unbuffered Form Factor 240-pin UDIMM Ranks Dual rank Configuration 16-chip 256Mx8 Pieces in Kit 2 Compatibility
Samsung 8GB (1x 8GB) DDR3L-1600 PC3L-12800 1.35V / 1.5V DR x8 204-pin SODIMM RAM Module Classification_ram-ddr4-2133-lrdimm-64gb-2x-qr MT18KSF51272AZ-1G6K1ZE Capacity 4GB (1x 4GB)Product Overview This 8GB (1x 8GB) DDR3L 1600 MT s Dual rank, x8 configuration RAM module from Samsung is for use in DDR3L compatible systems and operates at 1600 MT s with an overall transfer rate of PC3L 12800. This RAM module also operates at a standard voltage of 1. 35V 1. 5V and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part
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