Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-rdimm-64gb-2x-dr 2xHYMP125S64CP8-S6 Capacity 4GB (2x 2GB)

2xHYMP125S64CP8-S6 Capacity 4GB (2x 2GB) Brand Hynix Speed DDR2-800 - 800MT/s - PC2-6400 Voltage 1

2V Technology DDR4 Error Correction Non-ECC Signal Processing Unbuffered Form Factor 288-pin UDIMM Ranks Single rank CAS Latency CL17 Configuration x8 Pieces in Kit 1 Compatibility

Dramatically improve performance and handle larger user and application workloads in your mission critical workstations and servers with this 8GB (1x 8GB) DDR4 2666 MT/s 288-pin EUDIMM RAM module from Samsung

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Samsung 4GB (1x 4GB) CL11 DDR3-1600 PC3-12800 1.5V 240-pin UDIMM RAM Module Classification_ram-ddr4-2133-rdimm-64gb-2x-dr 2xHYMP125S64CP8-S6 Capacity 4GB (2x 2GB)Product Overview This 4GB (1x 4GB) DDR3 1600 MT s RAM module from Samsung is for use in DDR3 compatible systems and operates at 1600 MT s with an overall transfer rate of PC3 12800. This RAM module also operates at a standard voltage of 1. 5V with a CAS Latency of CL11, and is designed to allow you to run more applications simultaneously, switch between them faster, and provide a smoother computing experience. Technical Specifications Part No.