160a 750v Igbt Byd160t75sd Bgm160t75sd Electrica Vise Cost-Effective Solution: Hence affordable way

Cost-Effective Solution: Hence affordable way to extend the measurement range of your ammeter

automotive repair

frequency and duty cycle

and other industrial equipment

160a 750v Igbt Byd160t75sd Bgm160t75sd Electrica Vise Cost-Effective Solution: Hence affordable wayThe BYD160T75SD BGM160T75SD is a 750V, 160A Insulated Gate Bipolar Transistor (IGBT) developed by BYD Semiconductor. It features advanced Trench Field Stop (TrenchFS) technology and a soft, fast recovery anti parallel diode, making it suitable for high speed switching applications. Key Specifications: Collector Emitter Voltage (V<sub>CES< sub>): 750V Collector Current (I<sub>C< sub>): 160A Package Type: TO 247 Plus For detailed information, refer to